it is still difficult to achieve Light-emitting Diode emitting at even shorter wavelength uv replacement lamp regions, such as as in the ultraviolet (UV) part.3-8 Short-wavelength emitters are of interest for various fluorescence-based,...
See more 
it is still difficult to achieve Light-emitting Diode emitting at even shorter wavelength uv replacement lamp regions, such as as in the ultraviolet (UV) part.3-8 Short-wavelength emitters are of interest for various fluorescence-based, chemical-sensing applications, high-efficiency light, flame detection, and possibly optical-storage applications. Conventional nitride-based multiple-quantum well (MQW) LEDs use InGaN as ye stuff for well layers and GaN as the stuff for barrier bed. To attain a short-wavelength emitter, one of necessity to reduce the indium composition in the well bed so as to increase its bandgap energy. Even Soh, a decrease in in composition in the well bed volition result in a small bandgap discontinuity at the well/barrier interfaces. Thus, ye quantum-well depth in ye MQW active part will become littler, and the carrier confinement effect will be decreased. As a result, a wicked carrier-outflow problem might occur in See less 
